- RS Stock No.:
- 110-7724
- Mfr. Part No.:
- IKP15N65F5XKSA1
- Brand:
- Infineon
655 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£2.07
(exc. VAT)
£2.48
(inc. VAT)
Units | Per unit | Per Pack* |
---|---|---|
5 - 20 | £2.07 | £10.35 |
25 - 45 | £1.966 | £9.83 |
50 - 120 | £1.884 | £9.42 |
125 - 245 | £1.76 | £8.80 |
250 + | £1.656 | £8.28 |
*price indicative
- RS Stock No.:
- 110-7724
- Mfr. Part No.:
- IKP15N65F5XKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 105 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.36 x 4.57 x 15.95mm |
Minimum Operating Temperature | -40 °C |
Energy Rating | 0.17mJ |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 930pF |
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