Infineon IRGP4063DPBF Single IGBT, 96 A 600 V, 3-Pin TO-247AC, Through Hole
- RS Stock No.:
- 495-732
- Mfr. Part No.:
- IRGP4063DPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
Alternative
This product is not currently available. Here is our alternative recommendation.
Each
£3.24
(exc. VAT)
£3.89
(inc. VAT)
- RS Stock No.:
- 495-732
- Mfr. Part No.:
- IRGP4063DPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 96 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 330 W | |
Package Type | TO-247AC | |
Configuration | Single | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 15.9 x 5.3 x 20.3mm | |
Minimum Operating Temperature | -55 °C | |
Gate Capacitance | 3025pF | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 96 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 330 W | ||
Package Type TO-247AC | ||
Configuration Single | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.9 x 5.3 x 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 3025pF | ||
Maximum Operating Temperature +175 °C | ||
Infineon IGBT, 96A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IRGP4063DPBF
This IGBT is an insulated gate bipolar transistor designed for high-performance power electronics applications. With compact dimensions of 15.9 x 5.3 x 20.3 mm, the component supports efficient electronic circuit design while managing high current loads. It is optimised for reliable use in various electrical systems, ensuring robust functionality under challenging conditions.
Features & Benefits
• Low VCE(on) enables efficient energy conversion
• Operates under a maximum voltage rating of 600V
• Low switching losses improve overall system efficiency
• Ultra-fast soft recovery diode enhances performance reliability
• Designed for high temperatures up to 175°C for durability
• Operates under a maximum voltage rating of 600V
• Low switching losses improve overall system efficiency
• Ultra-fast soft recovery diode enhances performance reliability
• Designed for high temperatures up to 175°C for durability
Applications
• Used for motor drive controls and inverters
• Ideal for power supply circuits in industrial equipment
• Suitable for renewable energy systems like solar inverters
• Effective in automation and robotics for efficient power management
• Ideal for power supply circuits in industrial equipment
• Suitable for renewable energy systems like solar inverters
• Effective in automation and robotics for efficient power management
How does this component handle high current applications?
The IGBT can sustain a continuous collector current of 96A, making it suitable for demanding applications that require significant power transfer while maintaining efficiency.
What is the significance of the 600V voltage rating?
This maximum voltage rating ensures the transistor can operate effectively in high-voltage applications, providing a safe margin for voltage spikes and fluctuations in power electronics systems.
How does its thermal resistance affect performance?
With a thermal resistance of 0.45°C/W, heat dissipation is optimised, allowing for stable operation without overheating, which enhances reliability in extended use.
Can this IGBT be used in parallel configurations?
Yes, its design allows for excellent current sharing in parallel operation, which is crucial for high current applications where multiple devices may be used together.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Related links
- ROHM RGW00TS65DGC13 Single IGBT 3-Pin TO-247GE, Through Hole
- ROHM RGW00TS65GC13 Single IGBT 3-Pin TO-247GE, Through Hole
- Infineon IRG4PC40UPBF IGBT 3-Pin TO-247AC, Through Hole
- Infineon IRGP6690DPBF IGBT 3-Pin TO-247AC, Through Hole
- Infineon IRG4PC50KDPBF IGBT 3-Pin TO-247AC, Through Hole
- Infineon IRG4PC30FDPBF IGBT 3-Pin TO-247AC, Through Hole
- Infineon IRG4PC50UD-EPBF IGBT 3-Pin TO-247AC, Through Hole
- Vishay VS-GT100TS065N Half Bridge IGBT 7-Pin INT-A-PAK, Panel Mount