onsemi FGY4L100T120SWD, Type N-Channel Common Emitter IGBT, 200 A 1200 V, 4-Pin TO-247-4L, Through Hole
- RS Stock No.:
- 277-076P
- Mfr. Part No.:
- FGY4L100T120SWD
- Brand:
- onsemi
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Subtotal 10 units (supplied in a tube)*
£81.20
(exc. VAT)
£97.40
(inc. VAT)
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In Stock
- 20 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 99 | £8.12 |
| 100 - 499 | £7.50 |
| 500 - 999 | £6.95 |
| 1000 + | £6.23 |
*price indicative
- RS Stock No.:
- 277-076P
- Mfr. Part No.:
- FGY4L100T120SWD
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 200A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Number of Transistors | 1 | |
| Configuration | Common Emitter | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 22.54mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 200A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1.07kW | ||
Number of Transistors 1 | ||
Configuration Common Emitter | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 22.54mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.
High current capability
Smooth and optimized switching
Low switching loss
RoHS compliant