Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole
- RS Stock No.:
- 184-521
- Mfr. Part No.:
- GT60J323(Q)
- Brand:
- Toshiba
1 In stock - FREE next working day delivery available
10 available from Europe for delivery within 5 working day(s).
Added
Price Each
£5.49
(exc. VAT)
£6.59
(inc. VAT)
| Units | Per unit |
| 1 - 24 | £5.49 |
| 25 - 99 | £4.30 |
| 100 - 249 | £3.73 |
| 250 - 499 | £3.47 |
| 500 + | £3.42 |
- RS Stock No.:
- 184-521
- Mfr. Part No.:
- GT60J323(Q)
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Package Type | TO-3PLH |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 20.5 x 5.2 x 26mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 184-521
- Mfr. Part No.:
- GT60J323(Q)
- Brand:
- Toshiba
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