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Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole


1 In stock - FREE next working day delivery available
10 available from Europe for delivery within 5 working day(s).
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Price Each

£4.81

(exc. VAT)

£5.77

(inc. VAT)

Units

Added

RS Stock No.:
184-521
Mfr. Part No.:
GT60J323(Q)
Brand:
Toshiba
COO (Country of Origin):
JP
UnitsPer unit
1 - 24£4.81
25 - 99£3.76
100 - 249£3.27
250 - 499£3.04
500 +£2.99

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

AttributeValue
Maximum Continuous Collector Current60 A
Maximum Collector Emitter Voltage600 V
Maximum Gate Emitter Voltage±25V
Package TypeTO-3PLH
Mounting TypeThrough Hole
Channel TypeN
Pin Count3
Transistor ConfigurationSingle
Dimensions20.5 x 5.2 x 26mm
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C