Semikron SKM200GAL12E4 , SEMITRANS3 , N-Channel IGBT Module, 314 A max, 1200 V, Panel Mount

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RS Stock No.:
687-4970
Mfr. Part No.:
SKM200GAL12E4
Brand:
Semikron
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Brand

Semikron

Maximum Continuous Collector Current

314 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS3

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 30.5mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
SK

Single IGBT Modules


SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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