Semikron SKM200GAL12E4 , SEMITRANS3 , N-Channel IGBT Module, 314 A max, 1200 V, Panel Mount
- RS Stock No.:
- 687-4970
- Mfr. Part No.:
- SKM200GAL12E4
- Brand:
- Semikron
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Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 687-4970
- Mfr. Part No.:
- SKM200GAL12E4
- Brand:
- Semikron
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron | |
| Maximum Continuous Collector Current | 314 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | SEMITRANS3 | |
| Configuration | Single | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 5 | |
| Transistor Configuration | Single | |
| Dimensions | 106.4 x 61.4 x 30.5mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Semikron | ||
Maximum Continuous Collector Current 314 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type SEMITRANS3 | ||
Configuration Single | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 5 | ||
Transistor Configuration Single | ||
Dimensions 106.4 x 61.4 x 30.5mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- SK
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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