Semikron SKM200GB125D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 200 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2454
  • Mfr. Part No. SKM200GB125D
  • Brand Semikron
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

//media.rs-online.com/t_line/L330056-06.gif

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Dual Half Bridge
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS3
Pin Count 3
Dimensions 106.4 x 61.4 x 30.5mm
Height 30.5mm
Length 106.4mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 61.4mm
41 In stock - FREE next working day delivery available
Price Each
£ 183.00
(exc. VAT)
£ 219.60
(inc. VAT)
Units
Per unit
1 - 1
£183.00
2 - 4
£173.85
5 - 9
£167.81
10 - 19
£161.58
20 +
£153.54
Related Products
Dual IGBT Modules from Semikron in modern low-profile ...
Description:
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, ...
The Infineon range of IGBT Modules offer low ...
Description:
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, Prime PACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The Prime PACK ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and ...