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Semikron SKM200GB125D, SEMITRANS3 , N-Channel Dual Half Bridge IGBT Module, 200 A max, 1200 V, Panel Mount

16 In stock - FREE next working day delivery available
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RS Stock No.:
Mfr. Part No.:
UnitsPer unit
1 - 1£183.00
2 - 4£173.85
5 - 9£167.81
10 - 19£161.58
20 +£153.54

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Transistor ConfigurationSeries
ConfigurationDual Half Bridge
Maximum Continuous Collector Current200 A
Maximum Collector Emitter Voltage1200 V
Maximum Gate Emitter Voltage±20V
Channel TypeN
Mounting TypePanel Mount
Package TypeSEMITRANS3
Pin Count3
Dimensions106.4 x 61.4 x 30.5mm
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-40 °C