Semikron SKM100GB125DN, SEMITRANS2 , N-Channel Dual Half Bridge IGBT Module, 100 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2410
  • Mfr. Part No. SKM100GB125DN
  • Brand Semikron
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

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IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Dual Half Bridge
Transistor Configuration Series
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS2
Pin Count 7
Dimensions 94.5 x 34.5 x 30.5mm
Height 30.5mm
Length 94.5mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 34.5mm
142 In stock - FREE next working day delivery available
Price Each
£ 96.28
(exc. VAT)
£ 115.54
(inc. VAT)
Units
Per unit
1 - 1
£96.28
2 - 4
£91.47
5 - 9
£86.94
10 - 19
£82.51
20 +
£78.37
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