Broadcom ATF-33143-BLKG HEMT 305 mA 5.5 V 4-Pin SOT-343
- RS Stock No.:
- 629-6774
- Mfr. Part No.:
- ATF-33143-BLKG
- Brand:
- Broadcom
Discontinued
- RS Stock No.:
- 629-6774
- Mfr. Part No.:
- ATF-33143-BLKG
- Brand:
- Broadcom
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Broadcom | |
| Package Type | SOT-343 | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 600 mW | |
| Pin Count | 4 | |
| Dimensions | 2.25 x 1.35 x 1mm | |
| Maximum Operating Temperature | +160 °C | |
| Select all | ||
|---|---|---|
Brand Broadcom | ||
Package Type SOT-343 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 600 mW | ||
Pin Count 4 | ||
Dimensions 2.25 x 1.35 x 1mm | ||
Maximum Operating Temperature +160 °C | ||
N-channel HEMT, Avago Technologies
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.