Infineon 2ED2184S06FXUMA1, Gate Driver 2, 2.5 A 14-Pin 25 V, DSO
- RS Stock No.:
- 258-0613
- Mfr. Part No.:
- 2ED2184S06FXUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.62
(exc. VAT)
£3.14
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,070 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.31 | £2.62 |
| 20 - 48 | £1.115 | £2.23 |
| 50 - 98 | £1.035 | £2.07 |
| 100 - 198 | £0.965 | £1.93 |
| 200 + | £0.895 | £1.79 |
*price indicative
- RS Stock No.:
- 258-0613
- Mfr. Part No.:
- 2ED2184S06FXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 2.5A | |
| Pin Count | 14 | |
| Fall Time | 15ns | |
| Package Type | DSO | |
| Driver Type | Gate Driver | |
| Rise Time | 600ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 25V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | 2ED2184 (4) S06F (J) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 2.5A | ||
Pin Count 14 | ||
Fall Time 15ns | ||
Package Type DSO | ||
Driver Type Gate Driver | ||
Rise Time 600ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 25V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series 2ED2184 (4) S06F (J) | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (400 ns)
Maximum supply voltage of 25 V
50% lower level-shift losses
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