The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.

Drives N-channel MOSFET half bridge
Pb-free (RoHS compliant)
Bootstrap supply max voltage to 114VDC
On-chip 1Ω bootstrap diode
Fast propagation times for multi-MHz circuits
Drives 1000pF load with rise and fall times typ of 10ns
CMOS input thresholds for improved noise immunity
Low Power Consumption
Wide Supply Range
Supply Under voltage Protection