Renesas Electronics HIP2210FRTZ-T7A, 3 A, 4 A, 6 → 18V 10-Pin, TDFN
- RS Stock No.:
- 250-6591P
- Mfr. Part No.:
- HIP2210FRTZ-T7A
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal 30 units (supplied on a continuous strip)*
£47.01
(exc. VAT)
£56.40
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 90 unit(s), ready to ship
Units | Per unit |
|---|---|
| 30 - 72 | £1.567 |
| 75 - 297 | £1.477 |
| 300 + | £1.27 |
*price indicative
- RS Stock No.:
- 250-6591P
- Mfr. Part No.:
- HIP2210FRTZ-T7A
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Logic Type | NMOS | |
| Output Current | 3 A, 4 A | |
| Supply Voltage | 6 → 18V | |
| Pin Count | 10 | |
| Package Type | TDFN | |
| Fall Time | 365ns | |
Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Logic Type NMOS | ||
Output Current 3 A, 4 A | ||
Supply Voltage 6 → 18V | ||
Pin Count 10 | ||
Package Type TDFN | ||
Fall Time 365ns | ||
The Renesas 100 V, 3 A source, 4 A sink high-frequency half-bridge NMOS FET driver belongs to HIP2210 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6 V to 18 V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.
115 VDC bootstrap supply maximum voltage supports 100 V on the half-bridge
Fast propagation delay and matching : 15ns typical delay, 2 ns typical matching (HIP2211)
Integrated 0.5 Ω typical bootstrap diode
Wide 6 V to 18 V operating voltage range
VDD and boot Undervoltage Lockout (UVLO)
Fast propagation delay and matching : 15ns typical delay, 2 ns typical matching (HIP2211)
Integrated 0.5 Ω typical bootstrap diode
Wide 6 V to 18 V operating voltage range
VDD and boot Undervoltage Lockout (UVLO)