ROHM BM3G007MUV-LBE2, 650V 46-Pin, VQFN046V8080

The ROHM Nano Cap EcoGaN 70mΩ 2MHz GaN HEMT power stage IC is designed for long-term support in industrial applications, offering high power density and efficiency. By integrating a 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, it significantly reduces parasitic inductance compared to traditional discrete solutions. This allows for a high switching slew rate of up to 150V/ns while maintaining adjustable gate drive strength for low EMI. The IC includes various protection features and additional functions to optimize cost and PCB size. Designed for compatibility with major existing controllers, it serves as an ideal replacement for traditional discrete power switches, such as super junction MOSFETs.

Long Time Support Product for Industrial Applications
Wide Operating Range for VDD Pin Voltage
Wide Operating Range for IN Pin Voltage
Low VDD Quiescent and Operating Current
Low Propagation Delay
Power Good Signal Output
Adjustable Gate Drive Strength