The Infineon FRAM Memory is a 128K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.

RoHS compliant
Low voltage operation
Low power consumption
Superior to battery backed SRAM modules
Superior for moisture and shock with vibration