Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25VN10-G

View all FRAM Memory

Subtotal (1 tube of 97 units)*

£1,018.015

(exc. VAT)

£1,221.618

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 291 unit(s) shipping from 27 October 2025
  • Plus 999,999,675 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
97 +£10.495£1,018.02

*price indicative

RS Stock No.:
188-5424
Mfr. Part No.:
FM25VN10-G
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Memory Size

1Mbit

Organisation

128k x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

18ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Width

3.98mm

Maximum Operating Supply Voltage

3.6 V

Height

1.48mm

Maximum Operating Temperature

+85 °C

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Minimum Operating Supply Voltage

2 V

Number of Words

128k

Automotive Standard

AEC-Q100

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM25VN10)
Low power consumption
300 μA active current at 1 MHz
90 μA (typ) standby current
5 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no-leads (DFN) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Related links