Infineon 64kbit SPI FRAM Memory 8-Pin DFN, FM25CL64B-DG

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Subtotal (1 tube of 81 units)*

£131.382

(exc. VAT)

£157.626

(inc. VAT)

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Per Tube*
81 - 81£1.622£131.38
162 - 486£1.456£117.94
567 - 972£1.391£112.67
1053 +£1.318£106.76

*price indicative

RS Stock No.:
188-5412
Mfr. Part No.:
FM25CL64B-DG
Brand:
Infineon
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Brand

Infineon

Memory Size

64kbit

Organisation

8K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mounting Type

Surface Mount

Package Type

DFN

Pin Count

8

Dimensions

4.5 x 4 x 0.75mm

Length

4.5mm

Maximum Operating Supply Voltage

3.65 V

Width

4mm

Height

0.75mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2.7 V

Number of Words

8k

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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