Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K x 16
Configurable as 256 K x 8 using UB and LB
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation to 30-ns cycle time
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 128 K x 16 SRAM pinout
60-ns access time, 90-ns cycle time
Advanced features
Software-programmable block write-protect
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Low power consumption
Active current 7 mA (typ)
Standby current 120 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
44-pin thin small outline package (TSOP) Type II

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.