Infineon 4 kB Serial-I2C (2 Wire) FRAM 8-Pin SOIC, FM24C04B-G
- RS Stock No.:
- 125-4207
- Mfr. Part No.:
- FM24C04B-G
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 125-4207
- Mfr. Part No.:
- FM24C04B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Interface Type | Serial-I2C (2 Wire) | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Number of Words | 512 | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Interface Type Serial-I2C (2 Wire) | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Height 1.48mm | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Number of Words 512 | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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