Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
- RS Stock No.:
- 124-2933P
- Mfr. Part No.:
- CY15B104Q-SXI
- Brand:
- Infineon
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£86.90
(exc. VAT)
£104.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 715 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | £17.38 |
| 10 - 49 | £16.92 |
| 50 - 187 | £16.49 |
| 188 + | £16.08 |
*price indicative
- RS Stock No.:
- 124-2933P
- Mfr. Part No.:
- CY15B104Q-SXI
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 5.33 x 5.33 x 1.78mm | |
| Length | 5.33mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 5.33mm | |
| Height | 1.78mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 512K | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 512K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 5.33 x 5.33 x 1.78mm | ||
Length 5.33mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 5.33mm | ||
Height 1.78mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 512K | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.