The Infineon Flash Memory is fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a write buffer that allows a maximum of 256 words or 512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.

20 year data retention
Advanced sector protection
512 byte programming buffer
100000 program and erase cycles
Asynchronous 32 byte page read
Common flash interface parameter table