Winbond SLC NAND 1Gbit Parallel Flash Memory 63-Pin VFBGA, W29N01HVBINF

View all Flash Memory
Bulk discount available

Subtotal 10 units (supplied in a tray)*

£25.34

(exc. VAT)

£30.41

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 105 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
10 - 15£2.534
20 - 45£2.486
50 - 95£2.438
100 +£2.23

*price indicative

Packaging Options:
RS Stock No.:
188-2794P
Mfr. Part No.:
W29N01HVBINF
Brand:
Winbond
Find similar products by selecting one or more attributes.
Select all

Brand

Winbond

Memory Size

1Gbit

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

128M x 8 bit

Mounting Type

Surface Mount

Cell Type

SLC NAND

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

11.1mm

Height

0.6mm

Width

9.1mm

Dimensions

11.1 x 9.1 x 0.6mm

Number of Words

128M

Maximum Operating Temperature

+85 °C

Maximum Random Access Time

25µs

Minimum Operating Temperature

-40 °C

Series

W29N

Number of Bits per Word

8bit

COO (Country of Origin):
TW
Density : 1Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)