Winbond SLC NAND 4Gbit Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
188-2561
Mfr. Part No.:
W29N04GVBIAF
Brand:
Winbond
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Brand

Winbond

Memory Size

4Gbit

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

512M x 8 bit

Mounting Type

Surface Mount

Cell Type

SLC NAND

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Length

11.1mm

Height

0.6mm

Width

9.1mm

Dimensions

11.1 x 9.1 x 0.6mm

Maximum Operating Temperature

+85 °C

Number of Words

512M

Series

W29N

Minimum Operating Temperature

-40 °C

Maximum Random Access Time

25µs

Number of Bits per Word

8bit

Density : 4Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA

4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area

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