Microchip AT28HC64BF-12SU, 64kbit Parallel EEPROM Memory, 120ns 28-Pin SOIC Parallel
- RS Stock No.:
- 177-1465
- Mfr. Part No.:
- AT28HC64BF-12SU
- Brand:
- Microchip
Bulk discount available
Subtotal (1 tube of 27 units)*
£128.25
(exc. VAT)
£153.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 27 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 27 - 81 | £4.75 | £128.25 |
| 108 + | £4.631 | £125.04 |
*price indicative
- RS Stock No.:
- 177-1465
- Mfr. Part No.:
- AT28HC64BF-12SU
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Memory Size | 64kbit | |
| Interface Type | Parallel | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 28 | |
| Organisation | 8K x 8 bit | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Programming Voltage | 4.5 → 5.5V | |
| Number of Bits per Word | 8bit | |
| Dimensions | 18.1 x 7.6 x 2.35mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 8K | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Random Access Time | 120ns | |
| Data Retention | 10yr | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Memory Size 64kbit | ||
Interface Type Parallel | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 28 | ||
Organisation 8K x 8 bit | ||
Minimum Operating Supply Voltage 4.5 V | ||
Maximum Operating Supply Voltage 5.5 V | ||
Programming Voltage 4.5 → 5.5V | ||
Number of Bits per Word 8bit | ||
Dimensions 18.1 x 7.6 x 2.35mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 8K | ||
Minimum Operating Temperature -40 °C | ||
Maximum Random Access Time 120ns | ||
Data Retention 10yr | ||
- COO (Country of Origin):
- TW
The Microchip AT28HC64BF is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
70ns access time Self-Timed Erase and Write Cycles
Page Write and Byte Write
Data Polling for end of write detection
2 ms Maximum Option
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years
8 Kbits x 8 (64 Kbit)
5 V ±10% Supply
Parallel Interface
70ns access time Self-Timed Erase and Write Cycles
Page Write and Byte Write
Data Polling for end of write detection
2 ms Maximum Option
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 100 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
More than 100,000 erase/write cycles
Data retention > 10 years
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