onsemi MJ11015G PNP Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204
- RS Stock No.:
- 688-1502
- Mfr. Part No.:
- MJ11015G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£11.99
(exc. VAT)
£14.388
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 94 unit(s) ready to ship
- Plus 34 unit(s) ready to ship from another location
- Plus 18 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £5.995 | £11.99 |
| 20 + | £5.17 | £10.34 |
*price indicative
- RS Stock No.:
- 688-1502
- Mfr. Part No.:
- MJ11015G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | PNP | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 120 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Package Type | TO-204 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain | 200 | |
| Maximum Base Emitter Saturation Voltage | 5 V | |
| Maximum Collector Base Voltage | 120 V | |
| Maximum Collector Emitter Saturation Voltage | 4 V | |
| Width | 26.67mm | |
| Height | 8.51mm | |
| Dimensions | 39.37 x 26.67 x 8.51mm | |
| Maximum Operating Temperature | +200 °C | |
| Length | 39.37mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type PNP | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 120 V | ||
Maximum Emitter Base Voltage 5 V | ||
Package Type TO-204 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain 200 | ||
Maximum Base Emitter Saturation Voltage 5 V | ||
Maximum Collector Base Voltage 120 V | ||
Maximum Collector Emitter Saturation Voltage 4 V | ||
Width 26.67mm | ||
Height 8.51mm | ||
Dimensions 39.37 x 26.67 x 8.51mm | ||
Maximum Operating Temperature +200 °C | ||
Length 39.37mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.
• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity