onsemi TIP110G NPN Darlington Transistor, 5 A dc 60 V dc HFE:500, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

£17.05

(exc. VAT)

£20.45

(inc. VAT)

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  • 300 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£0.341£17.05
100 - 450£0.247£12.35
500 - 950£0.21£10.50
1000 - 2450£0.182£9.10
2500 +£0.181£9.05

*price indicative

RS Stock No.:
186-7439
Mfr. Part No.:
TIP110G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

5 A dc

Maximum Collector Emitter Voltage

60 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

500

Maximum Collector Base Voltage

60 V dc

Maximum Collector Emitter Saturation Voltage

2.5 V dc

Length

10.53mm

Maximum Operating Temperature

+150 °C

Dimensions

10.53 x 4.83 x 15.75mm

Minimum Operating Temperature

-65 °C

Width

4.83mm

Height

15.75mm

Maximum Power Dissipation

50 W

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN), TIP115, TIP116, TIP117 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package

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