Infineon BCV61BE6433HTMA1 Dual NPN Transistor, 100 mA, 30 V, 4-Pin SOT-143
- RS Stock No.:
- 857-8378
- Mfr. Part No.:
- BCV61BE6433HTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 10000 units)*
£540.00
(exc. VAT)
£650.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 - 10000 | £0.054 | £540.00 |
| 20000 - 40000 | £0.045 | £450.00 |
| 50000 + | £0.043 | £430.00 |
*price indicative
- RS Stock No.:
- 857-8378
- Mfr. Part No.:
- BCV61BE6433HTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 100 mA | |
| Maximum Collector Emitter Voltage | 30 V | |
| Package Type | SOT-143 | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Current Mirror | |
| Maximum Collector Base Voltage | 30 V | |
| Maximum Emitter Base Voltage | 6 V | |
| Maximum Operating Frequency | 250 MHz | |
| Pin Count | 4 | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 2.9 x 1.3 x 0.9mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 100 mA | ||
Maximum Collector Emitter Voltage 30 V | ||
Package Type SOT-143 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Current Mirror | ||
Maximum Collector Base Voltage 30 V | ||
Maximum Emitter Base Voltage 6 V | ||
Maximum Operating Frequency 250 MHz | ||
Pin Count 4 | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 2.9 x 1.3 x 0.9mm | ||
Current Mirror Transistors, Infineon
Matched dual NPN and PNP transistors with a common base connection for use as current mirror pairs.
Good thermal coupling and VBE matching
High current gain
Low collector-emitter saturation voltage
High current gain
Low collector-emitter saturation voltage
Bipolar Transistors, Infineon
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