Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 13 V, 4-Pin SOT-343
- RS Stock No.:
- 827-5154
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 827-5154
- Mfr. Part No.:
- BFP640ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 70GHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP640 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 70GHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP640 | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals Pb-Free (RoHS) | ||
Automotive Standard AEC-Q101 | ||
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.