Nexperia PBHV8215Z,115 Transistor, 2 A NPN, 150 V, 3-Pin SOT-223
- RS Stock No.:
- 816-0642
- Mfr. Part No.:
- PBHV8215Z,115
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 816-0642
- Mfr. Part No.:
- PBHV8215Z,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 150V | |
| Package Type | SOT-223 (SC-73) | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 350V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Power Dissipation Pd | 1.45W | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | PBHV8215Z | |
| Width | 7.3mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 150V | ||
Package Type SOT-223 (SC-73) | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 350V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Power Dissipation Pd 1.45W | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series PBHV8215Z | ||
Width 7.3mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.