Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Attribute
Value
Transistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-126
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
7 V
Maximum Operating Frequency
0.1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
8 x 3.25 x 11mm
Maximum Operating Temperature
+150 °C
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