Nexperia PBSS5350X,115 PNP Transistor, -3 A, -50 V, 4-Pin UPAK
- RS Stock No.:
- 518-1980
- Mfr. Part No.:
- PBSS5350X,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 10 units)*
£1.77
(exc. VAT)
£2.12
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 560 unit(s) ready to ship
- Plus 1,060 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £0.177 | £1.77 |
| 20 - 40 | £0.156 | £1.56 |
| 50 - 90 | £0.147 | £1.47 |
| 100 - 190 | £0.123 | £1.23 |
| 200 + | £0.105 | £1.05 |
*price indicative
- RS Stock No.:
- 518-1980
- Mfr. Part No.:
- PBSS5350X,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -3 A | |
| Maximum Collector Emitter Voltage | -50 V | |
| Package Type | UPAK | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 1.6 W | |
| Minimum DC Current Gain | 200 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 50 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 100 MHz | |
| Pin Count | 4 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 1.6 x 4.6 x 2.6mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -3 A | ||
Maximum Collector Emitter Voltage -50 V | ||
Package Type UPAK | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 1.6 W | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 50 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
Dimensions 1.6 x 4.6 x 2.6mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia