Infineon BFR183E6327HTSA1 NPN Bipolar Transistor, 65 mA, 20 V SOT-23
- RS Stock No.:
- 258-7737P
- Mfr. Part No.:
- BFR183E6327HTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£22.50
(exc. VAT)
£27.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,225 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 600 | £0.09 |
| 625 - 1225 | £0.057 |
| 1250 - 2475 | £0.052 |
| 2500 + | £0.049 |
*price indicative
- RS Stock No.:
- 258-7737P
- Mfr. Part No.:
- BFR183E6327HTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 65 mA | |
| Maximum Collector Emitter Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 65 mA | ||
Maximum Collector Emitter Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Number of Elements per Chip 1 | ||
The Infineon low noise silicon bipolar RF transistor is for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications
Pb free RoHS compliant package
VCEO max is 12 V
VCEO max is 12 V