MPN

Toshiba TBC847B,LM(T Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23

Name: Toshiba TBC847B,LM(T Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23
Brand: Toshiba
SKU: 236-3587
Availability: InStock

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Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	Bipolar Transistor
	Maximum DC Collector Current Idc	200mA
	Maximum Collector Emitter Voltage Vceo	50V
	Package Type	SOT-23
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	60V
	Transistor Polarity	NPN
	Maximum Power Dissipation Pd	320mW
	Minimum DC Current Gain hFE	200
	Minimum Operating Temperature	-55°C
	Maximum Emitter Base Voltage VEBO	6V
	Maximum Operating Temperature	150°C
	Pin Count	3
	Height	950μm
	Series	TBC847
	Width	2.4mm
	Length	2.9mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type Bipolar Transistor
	Maximum DC Collector Current Idc 200mA
	Maximum Collector Emitter Voltage Vceo 50V
	Package Type SOT-23
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 60V
	Transistor Polarity NPN
	Maximum Power Dissipation Pd 320mW
	Minimum DC Current Gain hFE 200
	Minimum Operating Temperature -55°C
	Maximum Emitter Base Voltage VEBO 6V
	Maximum Operating Temperature 150°C
	Pin Count 3
	Height 950μm
	Series TBC847
	Width 2.4mm
	Length 2.9mm
	Standards/Approvals No
	Automotive Standard No

The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.

Storage temperature range −55 to 150 °C

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