STMicroelectronics BUL1102EFP Bipolar Transistor, 8 A NPN, 450 V, 3-Pin TO-220
- RS Stock No.:
- 188-8449
- Mfr. Part No.:
- BUL1102EFP
- Brand:
- STMicroelectronics
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Subtotal (1 pack of 10 units)*
£7.66
(exc. VAT)
£9.19
(inc. VAT)
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In Stock
- 1,680 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.766 | £7.66 |
| 50 - 90 | £0.727 | £7.27 |
| 100 - 240 | £0.655 | £6.55 |
| 250 - 490 | £0.59 | £5.90 |
| 500 + | £0.569 | £5.69 |
*price indicative
- RS Stock No.:
- 188-8449
- Mfr. Part No.:
- BUL1102EFP
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 8A | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 12 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Emitter Base Voltage VEBO | 12V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 30.6mm | |
| Series | BUL1102E | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 8A | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 12 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Emitter Base Voltage VEBO 12V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 30.6mm | ||
Series BUL1102E | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
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