STMicroelectronics 2SD1047 Bipolar Transistor, 20 A NPN, 140 V, 3-Pin TO
- RS Stock No.:
- 188-8404
- Mfr. Part No.:
- 2SD1047
- Brand:
- STMicroelectronics
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 188-8404
- Mfr. Part No.:
- 2SD1047
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 140V | |
| Package Type | TO | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 200V | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Transition Frequency ft | 20MHz | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum DC Current Gain hFE | 50 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.8mm | |
| Width | 20.1mm | |
| Height | 40.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 140V | ||
Package Type TO | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 200V | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Transition Frequency ft 20MHz | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum DC Current Gain hFE 50 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 15.8mm | ||
Width 20.1mm | ||
Height 40.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC