onsemi SI3443DV Digital Transistor, 6-Pin TSOT-23
- RS Stock No.:
- 186-8963P
- Mfr. Part No.:
- SI3443DV
- Brand:
- onsemi
Discontinued
- RS Stock No.:
- 186-8963P
- Mfr. Part No.:
- SI3443DV
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Package Type | TSOT-23 | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 1.6 W | |
| Pin Count | 6 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 3 x 1.7 x 1mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Package Type TSOT-23 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 1.6 W | ||
Pin Count 6 | ||
Number of Elements per Chip 1 | ||
Dimensions 3 x 1.7 x 1mm | ||
Maximum Operating Temperature +150 °C | ||
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
-4 A, -20 V
RDS(ON) = 0.065Ω @ VGS = -4.5 V
RDS(ON) = 0.100Ω @ VGS = -2.5 V
Fast switching speed
Low gate charge (7.2nC typical)
High performance trench technology for extremely low RDS(ON)
SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
RDS(ON) = 0.065Ω @ VGS = -4.5 V
RDS(ON) = 0.100Ω @ VGS = -2.5 V
Fast switching speed
Low gate charge (7.2nC typical)
High performance trench technology for extremely low RDS(ON)
SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
