onsemi NJVMJD45H11G Digital Transistor, -80 V PNP Surface, 2-Pin

View all Bipolar Transistors
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
186-8178
Mfr. Part No.:
NJVMJD45H11G
Brand:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Maximum Collector Emitter Voltage Vceo

-80V

Mount Type

Surface

Transistor Configuration

Single

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

20W

Minimum DC Current Gain hFE

40

Transistor Polarity

PNP

Pin Count

2

Maximum Operating Temperature

150°C

Height

2.25mm

Length

6.73mm

Width

6.22 mm

Series

NJVMJD45H11

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
VN
The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves ("-1" Suffix)

Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)

Electrically Similar to Popular D44H/D45H Series

Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These Devices are Pb-Free

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