onsemi BD810G PNP Digital Transistor, 80 V dc, 3-Pin TO-220
- RS Stock No.:
- 186-8079
- Mfr. Part No.:
- BD810G
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 186-8079
- Mfr. Part No.:
- BD810G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | PNP | |
| Maximum Collector Emitter Voltage | 80 V dc | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage | 5 V dc | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 10.53 x 4.83 x 9.28mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type PNP | ||
Maximum Collector Emitter Voltage 80 V dc | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage 5 V dc | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 10.53 x 4.83 x 9.28mm | ||
- COO (Country of Origin):
- CN
The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
Pb-Free Packages are Available
Pb-Free Packages are Available