onsemi BDX53BG Digital Transistor, 80 V NPN Through Hole TO-220, 3-Pin

View all Bipolar Transistors
Bulk discount available

Subtotal (1 pack of 10 units)*

£8.67

(exc. VAT)

£10.40

(inc. VAT)

Add to Basket
Select or type quantity
Orders below £50.00 (exc. VAT) cost £6.95.
In Stock
  • 200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90£0.867£8.67
100 - 240£0.651£6.51
250 - 490£0.645£6.45
500 - 990£0.553£5.53
1000 +£0.449£4.49

*price indicative

Packaging Options:
RS Stock No.:
186-7938
Mfr. Part No.:
BDX53BG
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

Digital Transistor

Package Type

TO-220

Maximum Collector Emitter Voltage Vceo

80V

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

80V

Maximum Emitter Base Voltage VEBO

5V

Maximum Power Dissipation Pd

65W

Transistor Polarity

NPN

Minimum DC Current Gain hFE

750

Pin Count

3

Maximum Operating Temperature

150°C

Series

BDX53B

Height

9.28mm

Standards/Approvals

No

Length

10.53mm

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
CN
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C

Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

TO-220AB Compact Package

Pb-Free Packages are Available

Related links