onsemi FQB5N90TM Digital Transistor, 2 + Tab-Pin D2PAK
- RS Stock No.:
- 186-7897P
- Mfr. Part No.:
- FQB5N90TM
- Brand:
- onsemi
Subtotal 5 units (supplied on a continuous strip)*
£4.48
(exc. VAT)
£5.375
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 4,730 unit(s), ready to ship
Units | Per unit |
---|---|
5 + | £0.896 |
*price indicative
- RS Stock No.:
- 186-7897P
- Mfr. Part No.:
- FQB5N90TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Package Type | D2PAK | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 158 W | |
Pin Count | 2 + Tab | |
Number of Elements per Chip | 1 | |
Dimensions | 10.67 x 9.65 x 4.58mm | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 158 W | ||
Pin Count 2 + Tab | ||
Number of Elements per Chip 1 | ||
Dimensions 10.67 x 9.65 x 4.58mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
5.4A, 900V, RDS(on) = 2.3Ω(Max.) @VGS = 10 V, ID = 2.7A
Low gate charge ( Typ. 31nC)
Low Crss ( Typ. 13pF)
Applications
Lighting
Low gate charge ( Typ. 31nC)
Low Crss ( Typ. 13pF)
Applications
Lighting