onsemi FGD3245G2-F085 Digital Transistor, 450 (Breakdown) V, 2 + Tab-Pin DPAK
- RS Stock No.:
- 186-7394
- Mfr. Part No.:
- FGD3245G2-F085
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£2,282.50
(exc. VAT)
£2,740.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.913 | £2,282.50 |
*price indicative
- RS Stock No.:
- 186-7394
- Mfr. Part No.:
- FGD3245G2-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Maximum Collector Emitter Voltage | 450 (Breakdown) V | |
Package Type | DPAK | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Pin Count | 2 + Tab | |
Number of Elements per Chip | 1 | |
Base-Emitter Resistor | 30kΩ | |
Dimensions | 6.73 x 6.22 x 2.26mm | |
Typical Input Resistor | 120 Ω | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Maximum Collector Emitter Voltage 450 (Breakdown) V | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Pin Count 2 + Tab | ||
Number of Elements per Chip 1 | ||
Base-Emitter Resistor 30kΩ | ||
Dimensions 6.73 x 6.22 x 2.26mm | ||
Typical Input Resistor 120 Ω | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- PH
The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.
SCIS Energy = 320 mJ at TJ = 25°C
Logic Level Gate Drive
Low Saturation Voltage
Logic Level Gate Drive
Low Saturation Voltage
Related links
- onsemi FGD3245G2-F085 Digital Transistor 2 + Tab-Pin DPAK
- onsemi ISL9V5036P3-F085 Digital Transistor 3-Pin TO-220
- onsemi NJVMJD45H11G PNP Digital Transistor 2 + Tab-Pin DPAK
- onsemi MJD44H11RLG NPN Digital Transistor 2 + Tab-Pin DPAK
- onsemi MJB45H11T4G PNP Digital Transistor 2 + Tab-Pin D2PAK (TO-263)
- onsemi MJB45H11G PNP Digital Transistor 2 + Tab-Pin D2PAK (TO-263)
- onsemi BUB323ZT4G NPN Digital Transistor 2 + Tab-Pin D2PAK (TO-263)
- onsemi FJB102TM Dual NPN Digital Transistor 2 + Tab-Pin D2PAK (TO-263)