onsemi FDS6875 Dual Digital Transistor, 8-Pin SOIC
- RS Stock No.:
- 186-7390
- Mfr. Part No.:
- FDS6875
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 186-7390
- Mfr. Part No.:
- FDS6875
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 2 W | |
| Pin Count | 8 | |
| Number of Elements per Chip | 2 | |
| Dimensions | 4.9 x 3.9 x 1.58mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2 W | ||
Pin Count 8 | ||
Number of Elements per Chip 2 | ||
Dimensions 4.9 x 3.9 x 1.58mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
These P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
-6 A, -20 V
RDS(ON) = 0.030 Ω @ VGS = -4.5 V
RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Applications
This product is general usage and suitable for many different applications.
RDS(ON) = 0.030 Ω @ VGS = -4.5 V
RDS(ON) = 0.040 Ω @ VGS = -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Applications
This product is general usage and suitable for many different applications.