onsemi Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- RS Stock No.:
- 186-7378
- Mfr. Part No.:
- FDA59N30
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
£62.07
(exc. VAT)
£74.49
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 510 unit(s) shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | £2.069 | £62.07 |
| 120 - 240 | £1.659 | £49.77 |
| 270 - 480 | £1.57 | £47.10 |
| 510 + | £1.531 | £45.93 |
*price indicative
- RS Stock No.:
- 186-7378
- Mfr. Part No.:
- FDA59N30
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Maximum Power Dissipation Pd | 500W | |
| Transistor Polarity | N-Channel | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 18.9mm | |
| Series | UniFETTM | |
| Length | 16.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Maximum Power Dissipation Pd 500W | ||
Transistor Polarity N-Channel | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 18.9mm | ||
Series UniFETTM | ||
Length 16.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
RDS(on) = 56mΩ ( Max.)@ VGS = 10V, ID = 29.5A
Low gate charge ( Typ. 77nC)
Low Crss ( Typ. 80pF)
Applications
This product is general usage and suitable for many different applications.
Related links
- onsemi Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- onsemi FDA59N30 Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- onsemi FDA38N30 Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- onsemi Digital Transistor N-Channel Surface SOT-23, 3-Pin
- onsemi Digital Transistor N-Channel 18 A Through Hole TO-220, 3-Pin
- onsemi Digital Transistor N-Channel Through Hole TO-220, 3-Pin
- onsemi Digital Transistor N-Channel Through Hole TO-92, 3-Pin
- onsemi Digital Transistor N-Channel 2.6 A Surface SOT-223, 3-Pin
