onsemi BUL45D2G NPN Transistor, 10 A, 400 V, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

£56.15

(exc. VAT)

£67.40

(inc. VAT)

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Last RS stock
  • Final 100 unit(s), ready to ship
Units
Per unit
Per Tube*
50 - 50£1.123£56.15
100 - 200£0.841£42.05
250 - 450£0.833£41.65
500 - 950£0.713£35.65
1000 +£0.712£35.60

*price indicative

RS Stock No.:
186-7374
Mfr. Part No.:
BUL45D2G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

400 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

75 W

Minimum DC Current Gain

22

Transistor Configuration

Single

Maximum Collector Base Voltage

700 V dc

Maximum Emitter Base Voltage

12 V dc

Maximum Operating Frequency

1 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.53 x 4.83 x 15.75mm

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

Standards

Manufacturer Part Nos with S prefix are automotive qualified to AEC-Q101 standard.
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available

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