onsemi Transistor, 10 A NPN, 400 V, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

£56.15

(exc. VAT)

£67.40

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50£1.123£56.15
100 - 200£0.841£42.05
250 - 450£0.833£41.65
500 - 950£0.713£35.65
1000 +£0.712£35.60

*price indicative

RS Stock No.:
186-7374
Mfr. Part No.:
BUL45D2G
Brand:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

10A

Maximum Collector Emitter Voltage Vceo

400V

Package Type

TO-220

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

700V dc

Maximum Emitter Base Voltage VEBO

12V dc

Transistor Polarity

NPN

Maximum Power Dissipation Pd

75W

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

1MHz

Minimum DC Current Gain hFE

7

Pin Count

3

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.53mm

Height

15.75mm

Automotive Standard

No

COO (Country of Origin):
CN
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Low Base Drive Requirement

High Peak DC Current Gain (55 Typical) @ IC = 100 mA

Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

Integrated Collector-Emitter Free Wheeling Diode

Fully Characterized and Guaranteed Dynamic VCE(sat)

"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads

Pb-Free Package is Available

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