onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263

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Subtotal (1 pack of 10 units)*

£7.65

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£9.18

(inc. VAT)

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Per Pack*
10 - 90£0.765£7.65
100 - 240£0.571£5.71
250 - 490£0.564£5.64
500 - 990£0.483£4.83
1000 +£0.456£4.56

*price indicative

Packaging Options:
RS Stock No.:
184-4959
Mfr. Part No.:
MJB44H11G
Brand:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

20A

Maximum Collector Emitter Voltage Vceo

80V dc

Package Type

TO-263

Mount Type

Surface

Transistor Configuration

Single

Maximum Transition Frequency ft

1MHz

Maximum Power Dissipation Pd

50W

Maximum Emitter Base Voltage VEBO

5V dc

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

60

Maximum Operating Temperature

150°C

Pin Count

4

Length

11.05mm

Width

10.29 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable

These Devices are Pb-Free, Halogen Free/BFR Free

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