onsemi 2N6284G NPN Transistor, 40 A, 100 V, 3-Pin TO-204AA
- RS Stock No.:
- 184-4703P
- Mfr. Part No.:
- 2N6284G
- Brand:
- onsemi
Subtotal 10 units (supplied in a box)*
£28.33
(exc. VAT)
£34.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
10 + | £2.833 |
*price indicative
- RS Stock No.:
- 184-4703P
- Mfr. Part No.:
- 2N6284G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Transistor Type | NPN | |
Maximum DC Collector Current | 40 A | |
Maximum Collector Emitter Voltage | 100 V | |
Package Type | TO-204AA | |
Mounting Type | Through Hole | |
Maximum Power Dissipation | 160 W | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | 100 V dc | |
Maximum Emitter Base Voltage | 5 V dc | |
Maximum Operating Frequency | 1 MHz | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Dimensions | 39.37 x 26.67 x 8.51mm | |
Maximum Operating Temperature | +200 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 40 A | ||
Maximum Collector Emitter Voltage 100 V | ||
Package Type TO-204AA | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 100 V dc | ||
Maximum Emitter Base Voltage 5 V dc | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 39.37 x 26.67 x 8.51mm | ||
Maximum Operating Temperature +200 °C | ||
- COO (Country of Origin):
- MX
The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.
High DC Current Gain @ IC = 10 Adc
hFE = 2400 (Typ) - 2N6284
hFE = 4000 (Typ) - 2N6287
Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
hFE = 2400 (Typ) - 2N6284
hFE = 4000 (Typ) - 2N6287
Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with Built-In Base-Emitter Shunt Resistors