Infineon BFP842ESDH6327XTSA1 NPN Transistor, 40 mA, 3.25 V, 4-Pin SOT-343
- RS Stock No.:
- 170-2256
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 170-2256
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 40 mA | |
| Maximum Collector Emitter Voltage | 3.25 V | |
| Package Type | SOT-343 | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 120 mW | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 3.5 V, 4.1 V | |
| Maximum Operating Frequency | 60 GHz | |
| Pin Count | 4 | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 2 x 1.25 x 0.8mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 40 mA | ||
Maximum Collector Emitter Voltage 3.25 V | ||
Package Type SOT-343 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 120 mW | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 3.5 V, 4.1 V | ||
Maximum Operating Frequency 60 GHz | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 2 x 1.25 x 0.8mm | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads