Nexperia PBSS4041PZ,115 PNP Transistor, -5.7 A, -60 V, 3 + Tab-Pin SOT-223
- RS Stock No.:
- 166-0002
- Mfr. Part No.:
- PBSS4041PZ,115
- Brand:
- Nexperia
Subtotal (1 reel of 1000 units)*
£288.00
(exc. VAT)
£346.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 22 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £0.288 | £288.00 |
*price indicative
- RS Stock No.:
- 166-0002
- Mfr. Part No.:
- PBSS4041PZ,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Transistor Type | PNP | |
Maximum DC Collector Current | -5.7 A | |
Maximum Collector Emitter Voltage | -60 V | |
Package Type | SOT-223 (SC-73) | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 2.6 W | |
Minimum DC Current Gain | 200 | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | -60 V | |
Maximum Emitter Base Voltage | -5 V | |
Maximum Operating Frequency | 100 MHz | |
Pin Count | 3 + Tab | |
Number of Elements per Chip | 1 | |
Dimensions | 6.7 x 3.7 x 1.8mm | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Transistor Type PNP | ||
Maximum DC Collector Current -5.7 A | ||
Maximum Collector Emitter Voltage -60 V | ||
Package Type SOT-223 (SC-73) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2.6 W | ||
Minimum DC Current Gain 200 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage -60 V | ||
Maximum Emitter Base Voltage -5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 3 + Tab | ||
Number of Elements per Chip 1 | ||
Dimensions 6.7 x 3.7 x 1.8mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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