Nexperia PBSS8110X,135 NPN Transistor, 1 A, 100 V, 3-Pin SOT-89
- RS Stock No.:
- 165-9783
- Mfr. Part No.:
- PBSS8110X,135
- Brand:
- Nexperia
Subtotal (1 reel of 4000 units)*
£412.00
(exc. VAT)
£496.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,996,000 unit(s) shipping from 18 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
4000 + | £0.103 | £412.00 |
*price indicative
- RS Stock No.:
- 165-9783
- Mfr. Part No.:
- PBSS8110X,135
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Nexperia | |
Transistor Type | NPN | |
Maximum DC Collector Current | 1 A | |
Maximum Collector Emitter Voltage | 100 V | |
Package Type | SOT-89 | |
Mounting Type | Surface Mount | |
Maximum Power Dissipation | 2 W | |
Minimum DC Current Gain | 150 | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | 120 V | |
Maximum Emitter Base Voltage | 5 V | |
Maximum Operating Frequency | 100 MHz | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Dimensions | 4.6 x 2.6 x 1.6mm | |
Select all | ||
---|---|---|
Brand Nexperia | ||
Transistor Type NPN | ||
Maximum DC Collector Current 1 A | ||
Maximum Collector Emitter Voltage 100 V | ||
Package Type SOT-89 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2 W | ||
Minimum DC Current Gain 150 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 120 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 4.6 x 2.6 x 1.6mm | ||
- COO (Country of Origin):
- HK
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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