onsemi NST65010MW6T1G Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363
- RS Stock No.:
- 145-4061
- Mfr. Part No.:
- NST65010MW6T1G
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£159.00
(exc. VAT)
£192.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,000 unit(s) shipping from 15 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.053 | £159.00 |
*price indicative
- RS Stock No.:
- 145-4061
- Mfr. Part No.:
- NST65010MW6T1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -100 mA | |
| Maximum Collector Emitter Voltage | -65 V | |
| Package Type | SOT-363 (SC-88) | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 380 mW | |
| Minimum DC Current Gain | 220 | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage | -80 V | |
| Maximum Emitter Base Voltage | -5 V | |
| Maximum Operating Frequency | 100 MHz | |
| Pin Count | 6 | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 2.2 x 1.35 x 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type PNP | ||
Maximum DC Collector Current -100 mA | ||
Maximum Collector Emitter Voltage -65 V | ||
Package Type SOT-363 (SC-88) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 380 mW | ||
Minimum DC Current Gain 220 | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage -80 V | ||
Maximum Emitter Base Voltage -5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 6 | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 2.2 x 1.35 x 1mm | ||
- COO (Country of Origin):
- CN
Dual Matched Bipolar Transistors, ON Semiconductor
Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).
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