Vishay N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF530PBF
- RS Stock No.:
 - 918-9859
 - Mfr. Part No.:
 - IRF530PBF
 - Brand:
 - Vishay
 
Bulk discount available
Subtotal (1 tube of 50 units)*
£35.85
(exc. VAT)
£43.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 400 unit(s) ready to ship
 - Plus 500 unit(s) shipping from 11 November 2025
 
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units  | Per unit  | Per Tube*  | 
|---|---|---|
| 50 - 50 | £0.717 | £35.85 | 
| 100 - 200 | £0.681 | £34.05 | 
| 250 + | £0.645 | £32.25 | 
*price indicative
- RS Stock No.:
 - 918-9859
 - Mfr. Part No.:
 - IRF530PBF
 - Brand:
 - Vishay
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 88 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.41mm | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 14 A  | ||
Maximum Drain Source Voltage 100 V  | ||
Package Type TO-220AB  | ||
Mounting Type Through Hole  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 160 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Power Dissipation 88 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Number of Elements per Chip 1  | ||
Length 10.41mm  | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V  | ||
Maximum Operating Temperature +175 °C  | ||
Width 4.7mm  | ||
Transistor Material Si  | ||
Minimum Operating Temperature -55 °C  | ||
Height 9.01mm  | ||
- COO (Country of Origin):
 - CN
 
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