Name: P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK Infineon AUIRFR6215
Brand: Infineon
SKU: 737-7411
Price: 3.63 GBP
Availability: Discontinued

Automotive P-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	13 A
	Maximum Drain Source Voltage	150 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	580 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	110 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	6.22mm
	Number of Elements per Chip	1
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	66 nC @ 6.6 V
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Series	HEXFET
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 13 A
	Maximum Drain Source Voltage 150 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 580 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 110 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 6.22mm
	Number of Elements per Chip 1
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 66 nC @ 6.6 V
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Series HEXFET
	Height 2.39mm

P-Channel MOSFET, 13 A, 150 V, 3-Pin DPAK Infineon AUIRFR6215

Automotive P-Channel Power MOSFET, Infineon

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